Flash Rom
Electronic memory comes in many different forms. One of these forms is called flash memory. Flash memory is used most commonly in digital cameras and home video game consoles. This kind of ram can store data very fast and easily. Flash memory is considered a solid-state memory. This means that there is no moving parts, the transferring of data is all done electronically. In this essay, I will attempt to explain how flash memory actually works, and what the advantages and disadvantages are of using this type of memory. Flash memory is a type of EEPROM (Electrically Erasable Programmable Read Only Memory) chip. It has a grid of columns and rows with a cell that has two transistors at each intersection. In between the two transistors there lies a thin oxide layer. Each of the two transistors has a different function. One of the transistors is known as the floating gate, and the other is the control gate. The floating gate has only one route to link to the row, or wordline, that is through the control gate. As long is t
This article explained explicitly how the technology works. It also listed items that currently use this technology, which was interesting to know. I chose this article because I was curious how something so small could store so much data. The article had a large amount of technical terms that would not be understood by the average person. I would recommend this article to someone who has a background in electronics and is interested in understanding how the technology works. Electrons in the cells of a flash-memory chip can be returned to normal by applying a higher voltage charge. The method used to apply the electric field to the entire chip or the predetermined sections is called in-circuit wiring. This erases the targeted area of the chip, which can then be rewritten. Flash memory works much faster than traditional EEPROM’s because instead of just erasing a byte of data at a time, it erases a block or the entire chip, and then rewrites. (Tyson) his link is occurring, the cell has a value of 1. However to chan
Some topics in this essay:
Tyson Flash,
Tyson Tunneling,
,
Read Memory,
Tyson Electrons,
flash memory,
floating gate,
store data,
hard drive,
control gate,
gate floating gate,
thin oxide layer,
memory flash memory,
control gate floating,
50 percent,
data electronically,
thin oxide,
entire chip,
oxide layer,
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Approximate Word count = 698
Approximate Pages = 3 (250 words per page double spaced)
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